Biography
Graduate of the Faculty of Electronics and Information Technology of the Warsaw University of Technology. In January 2013, he received his M.Sc. degree (Flip-chip assembly for packaging of SiC diodes working at high temperatures up to 350°C) with an excellent grade under the supervision of Professor Ryszard Kisiel, PhD. He has been associated with the CEZAMAT project since 2013, initially in the field of equipping and commissioning laboratories and research equipment. In 2013, he completed a 6-month internship at the IMEC research center in Belgium, where he was involved in the SiGe surface preparation for epitaxy process and the defect etch of ultrathin Ge layers. His area of research interest includes packaging techniques, electronics of semiconductor devices with wide band gap for high-temperature applications.
Areas of research
- Packaging in electronics and photonics
- Ion implantation processes
- High-temperature and high-power electronics
Selected Publications
- Myśliwiec Marcin, Kisiel Ryszard, Kruszewski Michał: Influence of Ag particle shape on mechanical and thermal properties of TIM joints, Microelectronics International, 2022, DOI:10.1108/mi-06-2022-0108
- Górecki Paweł, Myśliwiec Marcin, Górecki Krzysztof, Kisiel Ryszard: Influence of packaging processes and temperature on characteristics of Schottky diodes made of SiC, IEEE Transactions on Components Packaging and Manufacturing Technology, vol. 9, nr 4, 2019, s. 633-641, DOI:10.1109/TCPMT.2019.2894970
- Górecki Paweł, Górecki Krzysztof, Kisiel Ryszard, Myśliwiec Marcin: Thermal Parameters of Monocrystalline GaN Schottky Diodes, IEEE Transactions on Electron Devices, vol. 66, nr 5, 2019, s. 2132-2138, DOI:10.1109/TED.2019.2907066
- Górecki Krzysztof, Bisewski Damian, Zarębski Janusz, Kisiel Ryszard, Myśliwiec Marcin: Investigations of mutual thermal coupling between SiC Schottky diodes situated in the common case, Circuit World, vol. 43, nr 1, 2017, s. 38-42, DOI:10.1108/CW-10-2016-0046
- Myśliwiec Marcin, Kisiel Ryszard: Thermal and mechanical properties of sintered Ag layers for power module assembly, Microelectronics International, vol. 32, nr 1, 2015, s. 37-42, DOI:10.1108/MI-10-2013-0050