Wire bonding
Wire bonding is a technique used in microelectronics to establish electrical connections between a semiconductor structure (e.g., an integrated circuit) and the leads of a package or a substrate, such as a printed circuit board (PCB). This method plays a crucial role in the assembly process of semiconductor devices and is widely utilized in the electronics industry due to its reliability, precision, and relatively low production cost.
The process involves the use of a fine wire – typically made of gold (Au), aluminum (Al), or copper (Cu) – to form interconnections between the bonding pads on the semiconductor die and the contact points on the package or substrate.
Technological capabilities include:
- Ball-wedge bonding with gold (Au) wire of 17.5 µm, 25 µm, and 50 µm diameter using thermosonic bonding
- Ribbon bonding with gold (Au) ribbon of 125×25 µm and 250×25 µm dimensions using thermosonic bonding
- Ball-wedge bonding with copper (Cu) wire of 25 µm and 50 µm diameter using thermosonic bonding in a nitrogen environment
- Wedge-wedge bonding with fine aluminum (Al) wire of 17.5 µm, 25 µm, and 50 µm diameter using ultrasonic bonding
- Wedge-wedge bonding with thick aluminum (Al) wire of 150 µm and 300 µm diameter using ultrasonic bonding
- Wedge-wedge bonding with thick Cu-core wire of 200 µm and 300 µm diameter using ultrasonic bonding
- Capability for bonding in TO-type packages (e.g., TO-18/52, TO-38)
- Capability for bonding on customer-supplied substrates
Keywords: wire bonding, micro assembly, electrical connection, ball-wedge, wedge-wedge